Micron has unveiled its third-generation reduced latency DRAM (RLDRAM 3 memory), a high-bandwidth memory technology that enables a more efficient transfer of information across the network.

The company said that the new RLDRAM 3 memory offers a further increase in density and speed, while minimising latency and reducing power consumption for higher performing networking applications.

Micron will continue to support its current RLDRAM 2 technology, including production into the future and is also improving its production technology to boost its performance and lower power consumption.

According to Micron, the upgraded RLDRAM 3 Memory includes sub 10-nanoseconds tRC, offering the industry's lowest random access latency; available in 576Mb-1Gb, giving flexibility for many designs; provides faster access to data of up to 2133Mb/s; and operates at 1.2V IO and 1.35V core, for more power savings.

The company said that it maintains a broad ecosystem of partners that have validated its RLDRAM memory offerings for ease of integration into networking equipment and is currently working with Altera Corpation and Xilinx to design RLDRAM 3 memory into their family of products.

Robert Feurle, vice president of DRAM marketing at Micron, said : "Micron's RLDRAM 3 memory meets the growing need for technology that can support the increases to network traffic as we watch Internet content consumption continue to grow."

Micron is expected to begin sampling its RLDRAM 3 device in the first half of 2011.